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| MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE X S Q T 1234 A B C D P P 5678 9 11 P 13 15 17 19 F Y (15 TYP.) 10 12 14 16 18 H U (4 TYP.) P B N U V W G V - DIA. (4 TYP.) N M M M E M M Z 1. V UPC 2. UFO 3. U P 4. V UPI 5. VVPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO 11. WP 12. V WPI 13. V NC 14. V NI 15. B R 16. U N 17. V N 18. WN 19. FO 20. P 21. B 22. N 23. U 24. V 25. W 2.0 0.1 X 0.5 0.1 MM PIN (6 TYP.) 0.6 0.1 X 0.4 0.1 MM PIN (19 TYP.) W L R J K AA Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic - Short Circuit - Over Current - Over Temperature - Under Voltage Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM10RSH120 is a 1200V, 10 Ampere Intelligent Power Module. Type PM Current Rating Amperes 10 VCES Volts (x 10) 120 V WPC V UPC UP GND GND IN V VPC WP W FO V WPI OUT V CC OUT V CC OUT V CC OUT V CC OUT V CC OUT V CC TEMP B N W V U OUT V CC GND GND GND GND GND GND GND GND GND GND GND GND FO FO FO FO FO FO SI SI SI SI SI SI SI FO IN IN IN IN IN IN U FO V UPI P Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 3.980.04 3.78 3.480.03 2.7000.03 2.660.02 2.360.04 1.850.02 1.830.03 1.28 0.97 0.710.04 0.530.01 Millimeters 101.01.0 96.0 88.50.8 68.580.8 67.50.5 60.01.0 47.00.5 46.50.8 32.6 24.6 18.01.0 13.50.3 Dimensions N P Q R S T U V W X Y Z AA Inches 0.41 0.400 0.392 0.31 0.26 0.246 0.18 Rad. 0.18 Dia. 0.170.02 0.10 0.1000.01 0.02 0.14 Millimeters 10.5 10.16 9.96 8.0 6.5 6.25 Rad. 4.5 Dia. 4.5 4.40.5 2.5 2.540.25 0.5 3.5 VP V FO V VPI V NC WN V NI UN FO BR VN Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Power Device Junction Temperature Storage Temperature Case Operating Temperature Mounting Torque, M4 Mounting Screws Module Weight (Typical) Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg TC -- -- VCC(prot.) Viso PM10RSH120 -20 to 150 -40 to 125 -20 to 100 0.98 ~ 1.47 100 800 2500 Units C C C N*m Grams Volts Vrms Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN * Br-VNC) Fault Output Supply Voltage Applied between (UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) VD VCIN VFO IFO 20 20 20 20 Volts Volts Volts mA IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25C) Peak Collector Current, (TC = 25C) Supply Voltage (Applied between P - N) Supply Voltage, Surge (Applied between P - N) Collector Dissipation VCES IC ICP VCC VCC(surge) PC 1200 10 20 900 1000 62 Volts Amperes Amperes Volts Volts Watts Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25C) Peak Collector Current, (TC = 25C) Supply Voltage (Applied between P - N) Supply Voltage, Surge (Applied between P - N) Collector Dissipation Diode Forward Current Diode DC Reverse Voltage VCES IC ICP VCC VCC(surge) PC IF VR(DC) 1200 10 20 900 1000 41 10 1200 Volts Amperes Amperes Volts Volts Watts Amperes Volts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection toff(OC) OT OTr Supply Circuit Under Voltage Protection UV UVr Supply Voltage VD ID Vth(on) Vth(off) fPWM IFO(H) IFO(L) Minimum Fault Output Pulse Width tFO VD = 15V Trip Level Reset Level Trip Level Reset Level Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC Circuit Current VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC Input ON Threshold Voltage Input OFF Threshold Voltage Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN * Br-VNC PWM Input Frequency Fault Output Current 3- Sinusoidal VD = 15V, VFO = 15V VD = 15V, VFO = 15V VD = 15V -- -- -- 1.0 15 -- 10 1.8 20 0.01 15 -- kHz mA mA ms -- -- 1.2 1.7 25 7 1.5 2.0 35 10 1.8 2.3 mA mA Volts Volts SC -20C T 125C, VD = 15V OC -20C T 125C, VD = 15V 15 15 -- -- -- 100 -- 11.5 -- 13.5 27 27 41 41 10 110 90 12.0 12.5 15 -- -- -- -- -- 125 -- 12.5 -- 16.5 Amperes Amperes Amperes Amperes s C C Volts Volts Volts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current ICES VEC VCE(sat) VCE = VCES, Tj = 25C VCE = VCES, Tj = 125C Emitter-Collector Voltage Collector-Emitter Saturation Voltage -IC = 10A, VD = 15V, VCIN = 5V VD = 15V, VCIN = 0V, IC = 10A VD = 15V, VCIN = 0V, IC = 10A, Tj = 125C Inductive Load Switching Times ton trr tC(on) toff tC(off) VD = 15V, VCIN = 0V 15V VCC = 600V, IC = 10A Tj = 125C 0.4 -- -- -- -- 0.7 0.15 0.3 1.7 0.6 1.5 0.3 1.0 2.9 1.2 s s s s s -- -- -- -- -- -- -- 2.5 2.3 2.1 1.0 10 3.5 3.3 3.1 mA mA Volts Volts Volts Brake Sector Collector-Emitter Saturation Voltage VCE(sat) Tj = 25C VD = 15V, VCIN = 0V, IC = 10A, Tj = 125C Diode Forward Voltage Collector Cutoff Current VFM ICES IF = 10A, VD = 15V, VCIN = 5V VCE = VCES, Tj = 25C VCE = VCES, Tj = 125C -- -- -- 2.5 -- -- 3.5 1 10 Volts mA mA -- 2.5 3.5 Volts VD = 15V, VCIN = 0V, IC = 10A, -- 2.8 3.8 Volts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Junction to Case Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f)Q Rth(c-f)F Contact Thermal Resistance Rth(c-f) Condition Each Inverter IGBT Each Inverter FWDi Each Brake IGBT Each Brake FWDi Case to Fin Per Module, Thermal Grease Applied Min. -- -- -- -- -- Typ. -- -- -- -- -- Max. 2.0 5.5 3.0 5.5 Units C/Watt C/Watt C/Watt C/Watt 0.044 C/Watt Recommended Conditions for Use Characteristic Supply Voltage Symbol VCC VD Input ON Voltage Input OFF Voltage PWM Input Frequency Minimum Dead Time VCIN(on) VCIN(off) fPWM tdead Condition Applied across P-N Terminals Applied between VUP1-VUPC, VN1-VNC, VVP1-VVPC, VWP1-VWPC Applied between UP, VP, WP, UN, VN, WN, Br Using Application Circuit Input Signal 0 ~ 0.8 4.0 ~ VD 5 ~ 20 2.5 Volts Volts kHz s Value 0 ~ 800 15 1.5 Units Volts Volts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 0 12 14 16 18 20 COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) 15.0 COLLECTOR CURRENT, IC, (AMPERES) 2.5 2.0 1.5 1.0 0.5 0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC Tj = 25oC VCIN = 0V 15 VD = 17V 13 10.0 IC = 50A VCIN = 0V Tj = 25oC Tj = 125oC 5.0 0 0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 VCC = 600V VD = 15V SWITCHING TIMES, tc(on), tc(off), (s) 100 Inductive Load 103 VCC = 600V VD = 15V Inductive Load 102 Inductive Load REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 600V VD = 15V REVERSE RECOVERY TIME, trr, (s) SWITCHING TIMES, ton, toff, (s) Tj = 25oC Tj = 125oC toff ton Tj = 25oC Tj = 125oC Tj = 25oC Tj = 125oC trr 100 10-1 tc(off) tc(on) 102 101 Irr 10-1 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 10-2 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 100 102 DIODE FORWARD CHARACTERISTICS COLLECTOR REVERSE CURRENT, -IC, (AMPERES) OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) OVER CURRENT TRIP LEVEL % (NORMALIZED) 120 OVER CURRENT TRIP LEVEL % (NORMALIZED) 102 140 VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC Tj = 25oC 120 110 100 100 101 80 90 60 80 VD = 15V 100 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 0 0 12 14 16 18 20 SUPPLY VOLTAGE, VD, (VOLTS) 0 -20 0 20 60 100 140 JUNCTION TEMPERATURE, Tj, (oC) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 3.0 VD = 15V FAULT OUTPUT PULSE WIDTH, tfo, (ms) 15 UV UVr 101 2.5 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) 14 100 2.0 13 10-1 1.5 12 1.0 11 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 2oC/W 0 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) 0 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) 10-3 10-3 10-2 10-1 TIME, (s) 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 5.5oC/W 10-3 10-3 10-2 10-1 TIME, (s) 100 101 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10RSH120 FLAT-BASE TYPE INSULATED PACKAGE Brake Part SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 0 12 14 16 18 20 COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 15 Tj = 25oC VCIN = 0V 15 2.5 2.0 1.5 1.0 0.5 0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 10 VD = 17V 13 5 Tj = 25oC VCIN = 0V IC = 10A 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) DIODE FORWARD CHARACTERISTICS TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 102 DIODE FORWARD CURRENT, IF, (AMPERES) 101 101 VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 100 100 101 10-1 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 3.0oC/W 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 5.5oC/W 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DIODE FORWARD VOLTAGE, VF, (VOLTS) 10-3 10-3 10-2 10-1 TIME, (s) 100 101 10-3 10-3 10-2 10-1 TIME, (s) 100 101 Sep.1998 |
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